Infineon FF200R12KS4 IGBT Module

Product Category:    IGBT Modules  FF200R12KS4

Manufacturer:    Infineon

RoHS:    YES

Product:    IGBT Silicon Modules

Configuration:    Dual

Collector- Emitter Voltage VCEO Max:    1200 V

Collector-Emitter Saturation Voltage:    3.2 V

Continuous Collector Current at 25 C:    275 A

Gate-Emitter Leakage Current:    400 nA

Pd - Power Dissipation:    1.4 kW

Package / Case:    62 mm

Maximum Operating Temperature:    + 125 C

Brand:    Infineon Technologies

Height:    30.5 mm

Length:    106.4 mm

Maximum Gate Emitter Voltage:    +/- 20 V

Minimum Operating Temperature:    - 40 C

Mounting Style:    Screw

Factory Pack Quantity:    1

FF200R12KS4

IGBT Modules 1200V 200A DUAL