When choosing between the Infineon FF200R12KT3 and FF200R12KT4 IGBT modules, it’s crucial to understand the key differences and applications for each. Both modules are high-performance Insulated Gate Bipolar Transistors (IGBTs), designed for demanding power applications. Here’s a detailed comparison to help you make an informed decision.
FF200R12KT3:
FF200R12KT4:
Parameter | FF200R12KT3 | FF200R12KT4 |
---|---|---|
V<sub>CES</sub> | 1200V | 1200V |
I<sub>C</sub> | 200A | 200A |
V<sub>CE(sat)</sub> | 2.15V | 2.05V |
Switching Frequency | High | Very High |
R<sub>thJC</sub> | 0.2 K/W | 0.15 K/W |
Dimensions | 106x61x30 mm | 106x61x30 mm |
Weight | 340 g | 330 g |
FF200R12KT3:
FF200R12KT4:
Both the FF200R12KT3 and FF200R12KT4 modules are robust choices for high-power applications. However, if your application demands very high switching frequencies and improved thermal performance, the FF200R12KT4 might be the better option. On the other hand, for more general high-power applications, the FF200R12KT3 provides excellent performance and reliability.
Choosing the right IGBT module depends on your specific application needs. Consider the operational environment, required efficiency, and thermal management capabilities to make the most informed decision.