#Infineon, #FF300R12KE4_B2, #IGBT_Module, #IGBT, 62mm C-series module with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals
Infineon FF300R12KE4_B2 is a power module designed for use in high-power applications such as industrial motor drives, wind and solar power systems, and power supplies. It is a 1200V 300A IGBT (Insulated Gate Bipolar Transistor) module, which combines high voltage and current capabilities with low switching losses.
FF300R12KE4_B2 module features a compact design with a built-in driver & protection features: short-circuit protection, overvoltage protection, & overtemperature protection. It also has low inductance module construction which helps to reduce the electromagnetic interference (EMI) generated during operation.
Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collectorcurrent TC = 100°C, Tvj max = 175°C IC nom 300A
Continuous DC collectorcurrent TC = 25°C, Tvj max = 175°C IC 460 A
Repetitive peak collector current tP = 1 ms ICRM 600 A
Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 1600 W
Gate-emitter peak voltage VGES +/-20 V
Temperature under switching conditions Tvj op -40~150 °C
Isolation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 4000V
Storage temperature Tstg -40~125 °C
Screw M5-Mounting according to valid application note M 2.5 - 5.0 Nm
Gewicht Weight 340 g