the FF400R07KE4 an IGBT (Insulated Gate Bipolar Transistor) module. These ratings define the limits beyond which the device's operation may become unreliable or even permanently damaged. Here's a breakdown of the values:
- Collector-Emitter Voltage (VCES): 650 Volts
- The maximum voltage that can be applied between the collector and emitter terminals with the gate disconnected (VGE = 0V).
- Gate-Emitter Voltage (VGES): ±20 Volts
- The maximum voltage that can be applied between the gate and emitter terminals with the collector disconnected (VCE = 0V). It's important to note that this device is likely designed for use with positive and negative gate voltages.
- Collector Current (DC, TC = 125°C) (IC): 400 Amperes
- The maximum continuous collector current that the device can handle when the case temperature is at 125°C.
- Collector Current (Pulse, Repetitive) (ICRM): 800 Amperes
- The maximum repetitive pulse collector current that the device can handle.
- Total Power Dissipation (TC = 25°C) (Ptot): 1250 Watts
- The maximum power that the device can dissipate without exceeding its temperature limits when the case temperature is at 25°C.
- Isolation Voltage (Visol): 2500 Volts
- The isolation voltage between the device terminals and the baseplate. This is the maximum allowable voltage difference between these two sets of terminals.
- Maximum Junction Temperature (Tj(max)): 175 °C
- The maximum temperature that the device's internal junction can reach during operation. Exceeding this temperature can lead to device degradation.
- Maximum Case Temperature (TC(max)): 125 °C
- The maximum allowable temperature of the device's case during operation.
- Operating Junction Temperature (Tj(op)): -40 to +150 °C
- The recommended range of operating temperatures for the device's internal junction.
- Storage Temperature (Tstg): -40 to +125 °C
- The recommended range of storage temperatures for the device when it's not in operation.
