Infineon FF400R33KF2C IGBT Module

IHV A 3300 V, 400 A 130 mm dual IGBT Module with IGBT2 and Emitter Controlled diode - The experienced solution for traction and industry applications.

Product: IGBT Silicon Modules

Configuration: Dual

Collector- Emitter Voltage VCEO Max: 3300 V

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 660 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 4.8 kW

Package / Case: IHM

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 125 C

Packaging: Tray

Height: 38 mm

Length: 140 mm

Series: IGBT2

Technology: Si

Width: 130 mm

Brand: Infineon Technologies

Mounting Style: Chassis Mount

Maximum Gate Emitter Voltage: 20 V

Product Type: IGBT Modules

Factory Pack Quantity: 2

Subcategory: IGBTs

3300 V 400 A dual IGBT module 3300V 400A DUAL