#Infineon, #FF600R12IE4V, #IGBT_Module, #IGBT, FF600R12IE4V Infineon Module mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
Typical Applications
●Hybrid Electrical Vehicles (H)EV
Electrical Features
●Extended Operation Temperature Tvj op
●High DC Stability
High Short Circuit Capability; Self Limiting Short Circuit Current
●Low Switching Losses
●Unbeatable Robustness
●VCEsat with positive Temperature Coefficient
Mechanical Features
●40kV AC 1min Insulation
●Package with CTI > 400
●High0 Creepage and Clearance Distances
●High Power and Thermal Cycling Capability
●High Power Density
●Substrate for Low Therma1 Resistance
Absolute maximum ratings (Tc=25°C unless without specified)
●Collector-Emitter voltage Vces:1200V
●Gate-Emitter voltage VGES:±20V
●Collector current Ic Continuous Tc=25°C :600A
●Collector current Icp 1ms Tc=25°C :1200A
●Collector power dissipation Pc:3350W
●Operating junction temperature Tj:+150°C
●Storage temperature Tstg :-40 to +125°C
●Mounting screw torque 1.8~6.0 N·m
●Weight 825g