#EUPEC, #FF600R17KE3_B2, #IGBT_Module, #IGBT, FF600R17KE3_B2 Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10; FF600R17KE3_B2
Manufacturer Part Number: FF600R17KE3_B2Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X10Pin Count: 10ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.04Case Connection: ISOLATEDCollector Current-Max (IC): 950 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X10Number of Elements: 2Number of Terminals: 10Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 4300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10