Infineon FF650R17IE4DP_B2 IGBT Module

Typical Applications

●3-Level-Applications

●Auxiliary Inverters

●High Power Converters

●Traction Drives

●Wind Turbines

Electrical Features

●High DC Stability

●High Current Density

●Low Switching Losses

●Tvjop= 150°C

●Enlarged Diode for regenerative operation

●Low VcEsat

Mechanical Features

●Package with CTI > 400

●High Creepage and Clearance Distances

●High Power and Thermal Cycling Capability

●High Power Density

●Copper Base Plate

Absolute maximum ratings (Tc=25°C unless without specified)

●Collector-Emitter voltage Vces:1700V

●Gate-Emitter voltage VGES:±20V

●Collector current Ic Continuous Tc=25°C :650A

●Collector current Icp 1ms Tc=25°C :1300A

●Collector power dissipation Pc:4150W

●Isolation Voltage VIsol (AC 1 minute) :3600V

●Operating junction temperature Tj:+150°C

●Storage temperature Tstg :-40 to +125°C

●Mounting screw torque 1.8~6.0 N·m

●Weight 825g