Infineon FF800R12KE7_E IGBT Module

FF800R12KE7_E Product details

Features

• Electrical features

- VCES = 1200 V

- IC nom = 800 A / ICRM = 1600 A

- TRENCHSTOPTM IGBT7

- VCE,sat with positive temperature coefficient

• Mechanical features

- 4 kV AC 1 min insulation

- High creepage and clearance distances

- High power density

- Isolated base plate

- Package with CTI > 400

- Standard housing

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :800A

Collector current Icp 1ms Tc=25°C :1600A

Collector power dissipation Pc:480W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:-40 to +175°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.5~6 N·m

Weight 340g