#Mitsubishi, #FM600TU_3A, #IGBT_Module, #IGBT, Power Field-Effect Transistor, 300A I(D), 150V, 0.0022ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
HIGH POWER SWITCHING USEINSULATED PACKAGE
●ID(rms) ..........................................................300A
●VDSS.............................................................150V
●Insulated Type
●6-elements in a pack
●Thermistor inside
VDSS Drain-source voltage G-S Short 150V
VGSS Gate-source voltage D-S Short ±20V
ID Drain current TC’ = 11 4°C*3 300A
IDM Drain current Pulse*2 600A
PD*4 Maximum power dissipation TC = 25°C 960W
Tch Channel temperature :-40 to +150°C
Tstg Storage temperature Tstg :-40 to +125°C
Viso Isolation voltage Main terminal to base plate, AC 1 min. 2500V
Mounting torque Main terminal M6 3.5~4.5 N.M
Weight Typical value 600g