#FAIRCHILD, #FME6G15US60, #IGBT_Module, #IGBT, FME6G15US60 Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 17PM-BA, 17 PIN; FME6G15US60
Manufacturer Part Number: FME6G15US60Part Life Cycle Code: ObsoleteIhs Manufacturer: Fairchild SEMICONDUCTOR CORPPackage Description: FLANGE MOUNT, R-XUFM-P17Pin Count: 17Manufacturer: Fairchild Semiconductor CorporationRisk Rank: 5.82Additional Feature: LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 15 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-P17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 44 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 260 nsTurn-on Time-Nom (ton): 54 nsVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 17PM-BA, 17 PIN