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EUPEC FP100R12KT4-B11 IGBT Module

FP100R12KT4-B11

#EUPEC, #FP100R12KT4_B11, #IGBT_Module, #IGBT, FP100R12KT4-B11 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; FP100R12KT4-B11

· Categories: IGBT Module
· Manufacturer: EUPEC
· Price: US$
· Date Code: 11+
. Available Qty: 28
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FP100R12KT4-B11 Specification

Sell FP100R12KT4-B11, #EUPEC #FP100R12KT4-B11 Stock, FP100R12KT4-B11 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; FP100R12KT4-B11, #IGBT_Module, #IGBT, #FP100R12KT4_B11
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/fp100r12kt4-b11.html

Manufacturer Part Number: FP100R12KT4_B11Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X35Pin Count: 35ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 2.16Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X35Number of Elements: 7Number of Terminals: 35Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 515 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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