#EUPEC, #FP100R12KT4_B11, #IGBT_Module, #IGBT, FP100R12KT4-B11 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; FP100R12KT4-B11
Manufacturer Part Number: FP100R12KT4_B11Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X35Pin Count: 35ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 2.16Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X35Number of Elements: 7Number of Terminals: 35Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 515 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35