#Infineon, #FP100R12KT4, #IGBT_Module, #IGBT, FP100R12KT4 Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel MODULE-35
Manufacturer Part Number: FP100R12KT4
Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X35
Pin Count: 35
ECCN Code: EAR99
Case Connection: ISOLATED
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X35
Number of Elements: 7
Number of Terminals: 35
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 515 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel MODULE-35.