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Infineon FP100R12KT4 IGBT Module

#Infineon, #FP100R12KT4, #IGBT_Module, #IGBT, FP100R12KT4 Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel MODULE-35

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 55
· Date Code: 2021+
. Available Qty: 491
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FP100R12KT4 Specification

Sell FP100R12KT4, #Infineon #FP100R12KT4 Stock, FP100R12KT4 Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel MODULE-35, #IGBT_Module, #IGBT, #FP100R12KT4
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Manufacturer Part Number: FP100R12KT4

Manufacturer: Infineon TECHNOLOGIES AG

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X35

Pin Count: 35

ECCN Code: EAR99

Case Connection: ISOLATED

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: COMPLEX

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X35

Number of Elements: 7

Number of Terminals: 35

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 515 W

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel MODULE-35.

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