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Infineon FP10R12W1T4 IGBT Module

#Infineon, #FP10R12W1T4, #IGBT_Module, #IGBT, FP10R12W1T4 Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23; FP10R12W1T4

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 25
· Date Code: 2020+
. Available Qty: 139
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FP10R12W1T4 Specification

Sell FP10R12W1T4, #Infineon #FP10R12W1T4 Stock, FP10R12W1T4 Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23; FP10R12W1T4, #IGBT_Module, #IGBT, #FP10R12W1T4
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Manufacturer Part Number: FP10R12W1T4

Pbfree Code: Yes

Part Life Cycle Code: Active

Manufacturer: Infineon TECHNOLOGIES AG

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X23

Pin Count: 23

ECCN Code: EAR99

Case Connection: ISOLATED

Collector Current-Max (IC): 20 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: COMPLEX

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X23

Number of Elements: 7

Number of Terminals: 23

Operating Temperature-Max: 175 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 105 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Time

Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23

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