#Infineon, #FP10R12W1T4, #IGBT_Module, #IGBT, FP10R12W1T4 Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23; FP10R12W1T4
Manufacturer Part Number: FP10R12W1T4
Pbfree Code: Yes
Part Life Cycle Code: Active
Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X23
Pin Count: 23
ECCN Code: EAR99
Case Connection: ISOLATED
Collector Current-Max (IC): 20 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X23
Number of Elements: 7
Number of Terminals: 23
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 105 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23