#Infineon, #FP15R12W1T4, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23;
Manufacturer Part Number: FP15R12W1T4
Pbfree Code: Yes
Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X23
Pin Count: 23
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Case Connection: ISOLATED
Collector Current-Max (IC): 28 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X23
Number of Elements: 7
Number of Terminals: 23
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 130 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23