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Infineon FP25R12W2T4 IGBT Module

#Infineon, #FP25R12W2T4, #IGBT_Module, #IGBT, FP25R12W2T4 Insulated Gate Bipolar Transistor 39A I(C) 1200V V(BR)CES N-Channel MODULE-35; FP25R12W2T4

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 30
· Date Code: 2021+
. Available Qty: 85
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FP25R12W2T4 Specification

Sell FP25R12W2T4, #Infineon #FP25R12W2T4 Stock, FP25R12W2T4 Insulated Gate Bipolar Transistor 39A I(C) 1200V V(BR)CES N-Channel MODULE-35; FP25R12W2T4, #IGBT_Module, #IGBT, #FP25R12W2T4
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Manufacturer Part Number: FP25R12W2T4

Pbfree Code: Yes

Part Life Cycle Code: Active

Manufacturer: Infineon TECHNOLOGIES AG

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X35

Pin Count: 35

ECCN Code: EAR99

Case Connection: ISOLATED

Collector Current-Max (IC): 39 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: COMPLEX

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X35

Number of Elements: 7

Number of Terminals: 35

Operating Temperature-Max: 175 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 175 W

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Insulated Gate Bipolar Transistor 39A I(C) 1200V V(BR)CES N-Channel MODULE-35

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