Infineon FP40R12KT3 IGBT Module

Infineon FP40R12KT3 is a high-power IGBT (Insulated Gate Bipolar Transistor) module that is widely used in industrial and automotive applications.

This module(FP40R12KT3) consists of two IGBTs in a half-bridge configuration, allows for high current and voltage handling capabilities.

FP40R12KT3 module has maximum collector-emitter voltage (VCE) 1200V & maximum collector current (IC) 40A, with a peak current 160A. It has a low on-state voltage drop and a fast switching speed, widely use in motor drives, renewable energy systems, and welding equipment.

FP40R12KT3 Specification:

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Continuous Collector Current at 25 C: 55 A

Maximum Operating Temperature: + 125 C

Package / Case: Econo 2

Packaging: Tray

Brand: Infineon Technologies

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

IGBT Modules N-CH 1.2KV 55A