Infineon FP75R12KT3 IGBT Module

The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon. This module is part of the EconoPIM™3 series and features a fast trench/field-stop IGBT3 along with an emitter-controlled high-efficiency diode. It is designed for various applications and offers high-performance characteristics.

Key Specifications:

• Configuration: Hex
• Collector-Emitter Voltage (VCEO Max): 1200 V
• Collector-Emitter Saturation Voltage: 2.15 V
• Continuous Collector Current at 25°C: 105 A
• Gate-Emitter Leakage Current: 400 nA
• Maximum Operating Temperature: +125°C
• Package / Case: Econo 3
• Mounting Style: Screw
• Pd - Power Dissipation: 355 W
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: -40°C
• Factory Pack Quantity: 10
• Product: IGBT Silicon Modules
• Application: IGBT, Inverter