Infineon FP75R12KT4 IGBT Module

FP75R12KT4 is a high-performance semiconductor device with various potential applications in industries such as auxiliary inverters, medical equipment, motor drives, and servo drives. It offers several electrical and mechanical features that make it suitable for demanding applications.

In terms of electrical features, the FP75R12KT4 exhibits low switching losses and low VCEsat (collector-emitter saturation voltage). It has a maximum operating junction temperature (Tvjop) of 150°C and VCEsat with a positive temperature coefficient. These characteristics contribute to efficient and reliable performance.

Mechanically, the FP75R12KT4 is designed to handle high power and thermal cycling, making it suitable for demanding environments. It includes an integrated NTC temperature sensor and features a copper base plate for enhanced heat dissipation. The device utilizes solder contact technology and is housed in a standard package.

Here are the maximum ratings and characteristics of the FP75R12KT4 at a temperature of 25°C unless otherwise specified:

• Collector-emitter voltage (VCES): 1200V
• Continuous DC collector current (ICnom): 75A at a maximum case temperature (TC) of 95°C and maximum junction temperature (Tvj max) of 175°C
• Repetitive peak collector current (ICRM): 150A for a pulse duration (tP) of 1ms
• Gate-emitter peak voltage (VGES): +/-20V
• Temperature under switching conditions (Tvj op): -40 to 150°C
• Storage temperature (Tstg): -40 to 125°C
• Weight: 300g