Infineon FP75R12KT4_B15 IGBT Module

Manufacturer: Infineon

Product Category: IGBT Modules

Configuration: 3-Phase

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.25 V

Continuous Collector Current at 25 C: 150 A

Gate-Emitter Leakage Current: 100 nA

Pd - Power Dissipation: 385 W

Package / Case: Econo 3

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Mounting Style: Chassis Mount

Maximum Gate Emitter Voltage: 20 V

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