Fairchild Semiconductor FQB34P10TM_F085 IGBT Module

Manufacturer Part Number: FQB34P10TM_F085Brand Name: ON SemiconductorRohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Manufacturer Package Code: TO263A02ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 5.15Avalanche Energy Rating (Eas): 2200 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 33.5 ADrain Current-Max (ID): 33.5 ADrain-source On Resistance-Max: 0.06 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 155 WPulsed Drain Current-Max (IDM): 134 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime -100V, -33.5A, 60mΩ, D2PAK P-Channel QFET®, TO-263 2L (D2PAK), 6400-TAPE REEL