Infineon FS100R12KE3 IGBT Module

Infineon FS100R12KE3 Description

The Infineon FS100R12KE3 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for various applications. It offers high voltage and current ratings, making it suitable for demanding power electronic systems. Here are the maximum ratings and characteristics of the FS100R12KE3 module:

• Collector-Emitter Voltage (VCES): 1200V (Tested at a junction temperature of 25°C)
• Continuous DC Collector Current: 100A
• Repetitive Peak Collector Current: 200A (Suitable for periodic peak current applications)
• Total Power Dissipation: 480W (Maximum power dissipation under specified conditions)
• Gate-Emitter Peak Voltage (VGES): ±20V (Peak voltage that can be applied between the gate and emitter)
• Temperature Under Switching Conditions: -40~150°C (Operating temperature range during switching operations)
• Weight: 300g (Physical weight of the module)

These specifications outline the electrical and thermal limits of the FS100R12KE3 module. Adhering to these ratings is crucial for ensuring safe and reliable operation. The module is designed for high-power applications where efficient switching and robust performance are required. Please note that these ratings are provided at a reference temperature of 25°C unless otherwise specified.