Infineon FS100R12N2T4P IGBT Module

FS100R12N2T4P Product details

Electrical Features

• Low VCEsat

• Tvj op = 150°C

• Trench IGBT 4

• VCEsat with positive temperature coefficient

Mechanical Features

•Al2O3 substrate with low thermal resistance

• High power and thermal cycling capability

• Integrated NTC temperature sensor

• Copper base plate

•Pre-applied Thermal Interface Material

IGBT-inverter maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :100A

Collector current Icp 1ms Tc=25°C :200A

Collector power dissipation Pc:470W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3~6 N·m

Weight Typical value 180g