Infineon FS150R12KT3 IGBT Module

FS150R12KT3 IGBT Module features current rating of 150A and voltage rating 1200V, along with low on-state voltage drop and fast switching speed for improved efficiency and performance.

Additionally, the FS150R12KT3 designed with high short-circuit withstand capability and an integrated temperature sensor for thermal management.

The FS150R12KT3 uses solder pins for easy assembly and replacement, making it versatile and reliable choice for demanding power electronics applications such as motor drives, inverters, and welding equipment.

Product Category: IGBT Modules

Manufacturer: Infineon

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 200 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 700 W

Package / Case: Econo 3

Maximum Operating Temperature: + 125 C

Brand: Infineon Technologies

Height: 17 mm

Length: 122 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

Width: 62 mm