Infineon FS150R12KT4 IGBT Module

Infineon FS150R12KT4 igbt module is part of the EconoPACK™ 3 series and contains trench/field stop IGBT 4, and emitter controlled 4 diode.

The FS150R12KT4 has maximum collector-emitter 1200V voltage. Continuous DC collector current of 150A at maximum junction temperature of 175°C, and repetitive peak collector 300A current for pulse duration of 1ms.

This IGBT module can dissipate a maximum 750W power at the case temperature of 25°C. The gate-emitter peak voltage is ±20V, it can operate within a temperature range of -40°C to 150°C under switching conditions.

Maximum ratings and characteristics:

Absolute maximum ratings (Tc=25°C unless specified otherwise):

Collector-emitter voltage at Tvj = 25°C: VCES 1200 V

Continuous DC collector current at TC = 100°C,

Tvj max = 175°C: IC nom 150 A

Repetitive peak collector current for tP = 1 ms: ICRM 300 A

Total power dissipation at TC = 25°C,

Tvj max = 175°C: Ptot 750 W

Gate-emitter peak voltage: VGES ±20V

Temperature under switching conditions: Tvj op-40150°C

Mounting M5 screw torque: 36 N·m

Weight: 300g