Infineon FS200R12PT4 IGBT Module

Part #FS200R12PT4

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: Details

Product: IGBT Silicon Modules

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 280 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 1000 W

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Packaging: Tray

Technology: Si

Brand: Infineon Technologies

Mounting Style: Chassis Mount

Maximum Gate Emitter Voltage: 20 V

IGBT module FS200R12PT4 Infineon 1200V/280A/1000W