#Infineon, #FS50R06W1E3, #IGBT_Module, #IGBT, FS50R06W1E3 Infineon Gate Bipolar Transistor, 50A , 600V
Typical Applications
Air Conditioning
.Motor Drives
·Servo Drives
·UPS Systems
Electrical Features
.Low Switching Losses
·Trench IGBT 3
·VCEsat with positive Temperature Coefficient
·Low VCEsat
Mechanical□Features
·A12O3 Substrate with Low Thermal Resistance
.Compact design
·Solder Contact Technology
Rugged mounting due to integrated mounting clamps
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:205W
Isolation Voltage VIsol (AC 1 minute) :3400V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Weight 24g