Infineon FS50R12KE3 IGBT Module

Manufacturer: Infineon Product Category: IGBT Modules RoHS: Yes Product: IGBT Silicon Modules Maximum Ratings and Characteristics: Absolute maximum ratings (Tc=25°C unless specified otherwise)

• Collector-Emitter Voltage: 1200 V (at Tvj = 25°C, VCES)
• Continuous DC Collector Current: 50 A (TC = 100°C, Tvj max = 175°C, IC nom)
• Repetitive Peak Collector Current: 100 A (tP = 1 ms, ICRM)
• Total Power Dissipation: 270 W (TC = 25°C, Tvj max = 175°C, Ptot)
• Gate-Emitter Peak Voltage: ±20V (VGES)
• Temperature under Switching Conditions: -40 to 150°C (Tvj op)
• Gate Charge: 0.47 µC (VGE = -15V...+15V, QG), 400mA (IGES)
• Collector-Emitter Cut Off Current: 5mA (VCE = 1200V, VGE = 0V, Tvj = 25°C, ICES)
• Gate-Emitter Leakage Current: (VCE = 0V, VGE = 20V, Tvj = 25°C)
• Mounting M5 Screw Torque: 3-6 N·m
• Weight: 180g
• Operating Temperature: -40 to 125°C (Tvj op)
• Storage Temperature: -40 to 125°C (Tstg)