Infineon FS75R12KE3G IGBT Module

Manufacturer: Infineon FS75R12KE3G

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:75A

Collector current Icp:150A

Collector power dissipation Pc:355W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Gewicht weight 300g

Mounting screw torque 3.5 *1 N·m

IGBT Modules 1200V 75A 3-PHASE