Infineon FS75R12KT3 IGBT Module

Product Category: IGBT Modules

Manufacturer: Infineon

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 105 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 355 W

Package / Case: Econo 2

Maximum Operating Temperature: + 125 C

Brand: Infineon Technologies

Height: 17 mm

Length: 107.5 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

Width: 45 mm

IGBT Modules N-CH 1.2KV 105A