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Infineon FS75R12KT4_B15 IGBT Module

#Infineon, #FS75R12KT4_B15, #IGBT_Module, #IGBT, Infineon module with Trench / Fieldstop IGBT 1200V 75A

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 40
· Date Code: 2022+
. Available Qty: 116
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FS75R12KT4_B15 Specification

Sell FS75R12KT4_B15, #Infineon #FS75R12KT4_B15 Stock, Infineon module with Trench / Fieldstop IGBT 1200V 75A, #IGBT_Module, #IGBT, #FS75R12KT4_B15
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The FS75R12KT4_B15 is an IGBT module with the following specifications:

Typical Applications:

  • Auxiliary Inverters
  • Motor Drives
  • Servo Drives

Electrical Features:

  • Low VCEsat: The module has a low saturation voltage (VCEsat).
  • Trench IGBT4: It utilizes trench gate technology for improved performance.
  • Tvjop=150°C: The maximum junction temperature during operation is 150°C.
  • VCEsat with Positive Temperature Coefficient: The saturation voltage (VCEsat) increases with temperature.

Mechanical Features:

  • Al2O3 Substrate with Low Thermal Resistance: The module uses an aluminum oxide substrate with low thermal resistance for efficient heat dissipation.
  • High Power and Thermal Cycling Capability: It is designed to handle high power and withstand thermal cycling.
  • Integrated NTC Temperature Sensor: The module includes an integrated Negative Temperature Coefficient (NTC) temperature sensor for temperature monitoring.
  • Copper Base Plate: It features a copper base plate for enhanced thermal conductivity.
  • Standard Housing: The module is housed in a standard package.

Maximum Ratings and Characteristics:

  • Collector-Emitter Sperrspannung (VCES): 1200 V (Maximum collector-emitter voltage at a temperature of 25°C).
  • Continuous DC Collector Current (IC): 75 A (Maximum continuous current at a temperature of 95°C and a maximum junction temperature of 175°C).
  • Repetitive Peak Collector Current (ICRM): 150 A (Peak collector current for repetitive operation with a pulse duration of 1 ms).
  • Total Power Dissipation (Ptot): 385 W (Maximum power dissipation at a temperature of 25°C and a maximum junction temperature of 175°C).
  • Gate-Emitter Peak Voltage (VGES): +/- 20 V (Peak voltage that can be applied between the gate and emitter terminals).
  • Temperature under Switching Conditions (Tvj op): -40 to 150 °C (Operating temperature range during switching operations).

The FS75R12KT4_B15 IGBT module is suitable for various applications, including auxiliary inverters, motor drives, and servo drives. It offers low VCEsat, high power capabilities, and reliable thermal management. For detailed and accurate information, it is recommended to refer to the official documentation and datasheet provided by the manufacturer.

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