#Infineon, #FZ1000R16KF4, #IGBT_Module, #IGBT, IHM-B Modul mit schenllem Trench/ feldstopp IGBT4 und Emitter Controlled 4 diode
switching applications and features advanced technologies for efficient and reliable operation.
Manufacturer: Infineon Technologies
Part Number: FZ1000R16KF4
Power Module Type: IGBT (Insulated Gate Bipolar Transistor)
Maximum Collector Current (IC): 1000A
Collector-Emitter Voltage (VCE): 1600V
Total Power Dissipation (Ptot): 9600W
Gate-Emitter Peak Voltage (VGES): +/-20V
Temperature Range: -40 to 150°C
Weight: 800g
Configuration: Single IGBT Chip
Package Type: Module
Mounting Style: Screw Mount
High-power handling capability
Low conduction and switching losses
High thermal efficiency with low thermal resistance
Designed for high-frequency operation
Suitable for various applications including motor control, power supplies, and inverters