#EUPEC, #FZ1050R12KF4, #IGBT_Module, #IGBT, FZ1050R12KF4 Insulated Gate Bipolar Transistor, 1050A I(C), 1200V V(BR)CES, N-Channel,; FZ1050R12KF4
Manufacturer Part Number: FZ1050R12KF4Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGManufacturer: Infineon Technologies AGRisk Rank: 5.74Case Connection: ISOLATEDCollector Current-Max (IC): 1050 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7JESD-609 Code: e0Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 7000 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN LEADTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1050A I(C), 1200V V(BR)CES, N-Channel,