#Infineon, #FZ1200R17HE4P, #IGBT_Module, #IGBT, FZ1200R17HE4P Infineon IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and pre-applied Thermal I
Typical Applications
●High power converters
●Motor drives
Electrical Features
●Extended operating temperature Tvj op
●Low switching losses
●Low VCEsat
●Tvj op= 150°C
Mechanical Features
●4 kV AC 1min insulation
●Package with CTI > 400
●High creepage and clearance distances
●High power density
●IHM B housing
●Copper base plate
●RoHS compliant
●Pre-applied Thermal Interface Material
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :1200A
Collector current Icp 1ms Tc=25°C :2400A
Collector power dissipation Pc:3900W
Isolation Voltage VIsol (AC 1 minute) :3400V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 1.8~2.1 N·m
Weight 1300g