Infineon FZ1200R33KL2 IGBT Module

Manufacturer Part Number: FZ1200R33KL2

Part Life Cycle Code: Active

Ihs Manufacturer: Infineon TECHNOLOGIES AG

Manufacturer: Infineon Technologies AG

Risk Rank: 5.59

Collector Current-Min (IC): 1200 A

Collector Current-Max (IC): 2400 A

Collector-Emitter Voltage-Max: 3300 V

Gate-Emitter Voltage-Max: 20 V

Number of Elements: 3

Operating Temperature-Max: 125 °C

Power Dissipation-Max (Abs): 14700 W

Subcategory: Insulated Gate BIP Transistors

VCEsat-Max: 3.65 V

Insulated Gate Bipolar Transistor, 2300A I(C), 3300V V(BR)CES,