#Infineon, #FZ1200R33KL2C_B5, #IGBT_Module, #IGBT, FZ1200R33KL2C-B5 Infineon IGBT High-Power Module 3300V 1200A
FZ1200R33KL2C-B5 Technical information
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:3300V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :1200A
Collector current Icp 1ms Tc=25°C :2400A
Collector power dissipation Pc:14.5W
Isolation Voltage VIsol (AC 1 minute) :3400V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 4.25~5.75 N·m
Weight 1400g