#Infineon, #FZ1600R17HP4_B2, #IGBT_Module, #IGBT, FZ1600R17HP4-B2 VCES = 1700V / IC nom = 1600A / ICRM = 3200A IHM-B Modul mit Trench / Feldstopp IGBT4 und Emitter Contro
Infineon #FZ1600R17HP4-B2 Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
• Wind Turbines
Electrical Features
• Extended Operation Temperature Tvjop
• Low Switching Losses
• Unbeatable Robustness
• VCE satwith positive Temperature Coefficient
• Low VCE sat
Mechanical Features
• 4 kV AC 1 min Insulation
• High Cree page and Clearance Distances
• High Power Density
• Isolated Base Plate
• Standard Housing
Maximum Rated Values
Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1700 V
Kollektor-Dauergleichstrom Continuous DC collectorcurrent TC = 100°C, Tvj max = 175°C IC nom 1600 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 3200 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 10,5 kW
Spitzenverlustleistung Maximum power dissipation Tvj = 125°C PRQM 2400 kW
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V
VCES = 1700V / IC nom = 1600A / ICRM = 3200A IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode