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Infineon FZ1600R17HP4-B2 IGBT Module

#Infineon, #FZ1600R17HP4_B2, #IGBT_Module, #IGBT, FZ1600R17HP4-B2 VCES = 1700V / IC nom = 1600A / ICRM = 3200A IHM-B Modul mit Trench / Feldstopp IGBT4 und Emitter Contro

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 300
· Date Code: 2021+
. Available Qty: 122
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FZ1600R17HP4-B2 Specification

Sell FZ1600R17HP4-B2, #Infineon #FZ1600R17HP4-B2 Stock, FZ1600R17HP4-B2 VCES = 1700V / IC nom = 1600A / ICRM = 3200A IHM-B Modul mit Trench / Feldstopp IGBT4 und Emitter Controlled Diode;, #IGBT_Module, #IGBT, #FZ1600R17HP4_B2
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/fz1600r17hp4-b2.html

Infineon #FZ1600R17HP4-B2 Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

• Wind Turbines

Electrical Features

• Extended Operation Temperature Tvjop

• Low Switching Losses

• Unbeatable Robustness

• VCE satwith positive Temperature Coefficient

• Low VCE sat

Mechanical Features

• 4 kV AC 1 min Insulation

• High Cree page and Clearance Distances

• High Power Density

• Isolated Base Plate

• Standard Housing

Maximum Rated Values

Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1700 V

Kollektor-Dauergleichstrom Continuous DC collectorcurrent TC = 100°C, Tvj max = 175°C IC nom 1600 A

Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 3200 A

Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 10,5 kW

Spitzenverlustleistung Maximum power dissipation Tvj = 125°C PRQM 2400 kW

Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V

VCES = 1700V / IC nom = 1600A / ICRM = 3200A IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode

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