Infineon FZ600R17KE3 IGBT Module

Infineon FZ600R17KE3 is a high-power module designed use in industrial drives, wind turbines, large motor control applications. this is half-bridge module that consists of six IGBTs & six anti-parallel diodes.

The module designed to handle high power, with maximum voltage 1700V & maximum current 600A.

FZ600R17KE3 module utilizes IGBT technology, low-inductance design ensures fast switching & high efficiency, which is crucial in high-power applications.

FZ600R17KE3 designed to be mounted with heat sink, the heat sink helps to dissipate heat generated during operation.

The FZ600R17KE3 module is intended for use in three-phase bridge circuits.

Manufacturer:Infineon

Product:IGBT Silicon Modules

Configuration:Dual

Collector- Emitter Voltage VCEO Max:1700 V

Collector-Emitter Saturation Voltage:2.45 V

Continuous Collector Current at 25 C:1070 A

Gate-Emitter Leakage Current:400 nA

Pd - Power Dissipation:3150 W

Package / Case:62 mm

Minimum Operating Temperature:- 40 C

Maximum Operating Temperature:+ 125 C

Packaging:Tray

Height:36.5 mm

Length:106.4 mm

Technology:Si

Width:61.4 mm

Mounting Style:Chassis Mount

Maximum Gate Emitter Voltage:20 V

IGBT Modules N-CH 1.7KV 1.07KA