Infineon FZ900R12KE4HOSA1 IGBT Module

Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

• Wind Turbines

Electrical Features

• Extended Operation Temperature Tvjop

• Low Switching Losses

• Unbeatable Robustness

• VCEsat with positive Temperature Coefficient

• Low VCEsat

Mechanical Features

• 4 kV AC 1min Insulation

• Package with CTI>400

• High Creepage and Clearance Distances

• High Power Density

• Isolated Base Plate

• Standard Housing

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-emitter voltage Tvj = 25°C VCES 1200 V

DC collector current TC = 100°C, Tvj max = 175°C IC nom 900 A

peak collector current tP = 1 ms ICRM 1800 A

Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 4300 W

Gate-emitter peak voltage VGES:±20V

Temperature under switching conditions Tvj op -40~150°C

Mounting M6 screw torque 2.5~5.0 N·m

Weight 340g