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Diodes Inc GBJ2008-F IGBT Module

GBJ2008-F

#Diodes Inc, #GBJ2008_F, #IGBT_Module, #IGBT, GBJ2008-F Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ2008-F

· Categories: IGBT Module
· Manufacturer: Diodes Inc
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1312
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GBJ2008-F Specification

Sell GBJ2008-F, #Diodes Inc #GBJ2008-F Stock, GBJ2008-F Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ2008-F, #IGBT_Module, #IGBT, #GBJ2008_F
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/gbj2008-f.html

Manufacturer Part Number: GBJ2008-FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: ROHS COMPLIANT, PLASTIC, GBJ, 4 PINPin Count: 4HTS Code: 8541.10.00.80Manufacturer: Diodes IncorporatedRisk Rank: 1.5Additional Feature: UL RECOGNIZEDBreakdown Voltage-Min: 800 VCase Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 1.05 VJESD-30 Code: R-PSFM-T4JESD-609 Code: e3Non-rep Pk Forward Current-Max: 240 ANumber of Elements: 4Number of Phases: 1Number of Terminals: 4Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 20 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Qualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 800 VSubcategory: Bridge Rectifier DiodesSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN

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