#Diodes Inc, #GBJ2008_F, #IGBT_Module, #IGBT, GBJ2008-F Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ2008-F
Manufacturer Part Number: GBJ2008-FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: ROHS COMPLIANT, PLASTIC, GBJ, 4 PINPin Count: 4HTS Code: 8541.10.00.80Manufacturer: Diodes IncorporatedRisk Rank: 1.5Additional Feature: UL RECOGNIZEDBreakdown Voltage-Min: 800 VCase Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 1.05 VJESD-30 Code: R-PSFM-T4JESD-609 Code: e3Non-rep Pk Forward Current-Max: 240 ANumber of Elements: 4Number of Phases: 1Number of Terminals: 4Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 20 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Qualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 800 VSubcategory: Bridge Rectifier DiodesSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN