HMsemi GPU300HF120D2 IGBT Module

Features .1200V200A,VCE(sat)(typ.)=3.2V@200A

.Ultrafast switching speed

.Excellent short Circuit ruggednesss

.62mm half bridge module

General Description

the IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±30V

Collector current Ic:400A

Collector current Icp:800A

Collector power dissipation Pc:862W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-55 to +125°C

Mounting screw torque 3.5*1 N·m