Infineon IFS150B12N3T4_B31 IGBT Module

Infineon #IFS150B12N3T4_B31  Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V

Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 150 A

Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 300 A

Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot750 W

Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V

Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C

Gewicht Weight 300g