#Infineon Technologies, #IHY20N135R3, #IGBT_Module, #IGBT, IHY20N135R3 Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC, TO-247HC, 3
Manufacturer Part Number: IHY20N135R3Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-247Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.82Collector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 1350 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6.4 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 310 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC, TO-247HC, 3 PIN