Infineon FZ3600R17HE4 and FZ3600R17KE3_S1 IGBT Modules

The Infineon FZ3600R17HE4 and FZ3600R17KE3_S1 IGBT modules are high-performance IGBT. Here’s a detailed comparison of their specifications:

Detailed Comparison:

1. Voltage and Current Ratings: Both modules are rated at 1700V and 3600A.
2. Configuration and Package: Both modules feature a single switch configuration and are housed in the IHM-B package, ensuring compatibility in design and assembly processes.
3. Switching Frequency and Isolation Voltage: The modules are designed to handle switching frequencies up to 20 kHz, with a high isolation voltage of 6000V.
4. Electrical Characteristics: Both modules have a collector-emitter saturation voltage (Vce(sat)) of 3.2V, which indicates similar efficiency and thermal performance under operating conditions. The gate-emitter voltage (Vge) is also identical at ±20V.
5. Thermal and Environmental Ratings: The operating temperature range for both modules is from -40°C to +150°C. They also share a similar storage temperature range and thermal resistance (junction to case) of 0.008 K/W, ensuring reliable performance over their lifespan.
6. Switching Energy: Both modules exhibit similar switching energy values, with Eon (turn-on energy) at 1100 mJ and Eoff (turn-off energy) at 2200 mJ, which is typical for modules of this size and rating.

Conclusion:

The FZ3600R17HE4 and FZ3600R17KE3_S1 IGBT modules from Infineon Technologies share many similarities in terms of electrical, thermal, and environmental specifications, making them suitable for similar applications. Their robust design and high performance ensure reliable operation in high-power and industrial settings. The choice between these two modules may depend more on specific application needs, availability, and cost rather than significant differences in technical specifications.

For further details, you can refer to their datasheets from Shunlongwei:

• FZ3600R17HE4
• FZ3600R17KE3_S1