Infineon launches 62mm CoolSiC™ module, opening up new application areas for silicon carbide

Infineon Technologies AG recently added a 62mm industry standard module package to its 1200 V CoolSiC™ MOSFET module series. It adopts mature 62mm device half-bridge topology design and trench gate chip technology, which opens the door to medium power applications for silicon carbide above 250kW (silicon IGBT technology is at the power density limit of 62mm package). Based on the traditional 62mm IGBT module, the application range of silicon carbide has been extended to solar energy, servers, energy storage, electric vehicle charging piles, traction, and commercial induction cookers and power conversion systems.

The 62mm module is equipped with Infineon’s CoolSiC MOSFET chip, which can achieve extremely high current density. Its extremely low switching loss and conduction loss can minimize the size of the cooling device. When operating at high switching frequencies, smaller magnetic components can be used. With Infineon’s CoolSiC chip technology, customers can design smaller inverters, thereby reducing overall system costs.

It uses a 62mm standard substrate and threaded interface, and has a highly robust structural design, which maximizes and improves system availability, while reducing maintenance costs and reducing downtime losses. Excellent temperature cycling ability and 150°C continuous working temperature (T_vjop), which brings excellent system reliability. Its symmetrical internal design makes the upper and lower switches have the same switching conditions. Optional “pretreatment thermal interface material” (TIM) configuration is available to further improve the thermal performance of the module.

Availability

The 1200 V CoolSiC™ MOSFET in a 62 mm package is available in 6mΩ/250 A, 3mΩ/357 A and 2mΩ/500A models. It also has an evaluation board designed for fast characteristic evaluation (double pulse/continuous operation) to choose from. For ease of use, it also provides flexible adjustment of the gate voltage and gate resistance. At the same time, it can also be used as a reference design for mass production of driver boards.