The Semikron SEMIX151GB12E4V4 IGBT module is an advanced power semiconductor designed for high-performance applications. This module features trenchgate technology, providing enhanced efficiency and switching performance. Here’s a comprehensive look at its specifications and benefits:
These high ratings ensure that the SEMIX151GB12E4V4 can handle substantial power loads, making it ideal for demanding applications.
Designed to operate in a wide temperature range, this module ensures reliable performance under extreme conditions.
Robust Design and Safety
Parameter | Specification |
---|---|
Manufacturer | Semikron |
Model | SEMIX151GB12E4V4 |
Collector-Emitter Voltage (Vces) | 1200V |
Collector Current (Ic) | 150A continuous, 450A pulsed |
Power Dissipation (Pc) | 310W |
Isolation Voltage (Visol) | 4000V (AC, 1 min) |
Maximum Junction Temperature (Tj) | +150°C |
Storage Temperature Range (Tstg) | -40°C to +175°C |
Mounting Screw Torque | 2.5 to 5 N·m |
Weight | 145g |
Compliance | RoHS, UL Recognized |
Technology | Trenchgate |
The SEMIX151GB12E4V4 is perfect for a range of high-power applications including:
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