Shunlongwei Co Ltd.

Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

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Introduction to IGBT Parameters: Understanding the Significance of 450A

Posted on: 05/20/2024

One of the key parameters used to characterize IGBTs is the current rating, typically denoted by “A” followed by a numerical value. In this context, the parameter “450A” signifies that the IGBT is capable of carrying a continuous collector current of 450 Amperes.

Mitsubishi PM450CS1H060 IGBT Module

Features:

  1. Adoption of new 5th generation IGBT Chip, leading to improved performance.
  2. Over-temperature protection via Tj detection of CSTBT chip, enabling error output from each conservation arm.
  3. 450A, 600V Current-sense IGBT type inverter.

Maximum Ratings and Characteristics:

  • Collector-Emitter voltage (Vces): 600V
  • Gate-Emitter voltage (VGES): ±20V
  • Continuous Collector current (Ic): 450A
  • Collector current (Icp) for 1ms: 900A
  • Isolation Voltage (VIsol) (AC 1 minute): 2500V
  • Operating junction temperature (Tj): +150°C
  • Storage temperature (Tstg): -40 to +125°C

Infineon FS450R12KE3_S1 IGBT Module

Features:

  • Designed for high-power applications.
  • Capable of handling a continuous DC Collector current of 450A.
  • Robust construction for reliability.

Maximum Ratings and Characteristics:

  • Collector-Emitter Voltage (VCES): 1200V
  • Continuous DC Collector Current: 450A
  • Repetitive Peak Collector Current: 900A
  • Total Power Dissipation: 2100W
  • Gate-Emitter Peak Voltage (VGES): ±20V
  • Temperature Under Switching Conditions: -40~150°C
  • Weight: 910g

Fuji 6MBI450V-170-50 IGBT Module

Features:

  • Six-pack IGBT module for high-power applications.
  • Built-in protection circuits.
  • Low-inductance module construction for improved switching performance.

Maximum Ratings and Characteristics:

  • Collector-Emitter voltage (Vces): 1700V
  • Gate-Emitter voltage (VGES): ±20V
  • Continuous Collector current (Ic): 450A
  • Collector current (Icp): 900A
  • Collector power dissipation (Pc): 2250W
  • Collector-Emitter voltage (VCES): 2500V
  • Junction temperature (Tj): 175°C
  • Operating junction temperature (Top): +150°C
  • Storage temperature (Tstg): -40 to +125°C

Key Differences:

  1. Voltage Ratings: While all three modules have different voltage ratings, ranging from 600V to 1700V, they are suitable for different applications depending on voltage requirements.
  2. Power Dissipation: The power dissipation capability varies, with the Mitsubishi module having a maximum power dissipation of 2250W, Infineon at 2100W, and Mitsubishi at 2250W.
  3. Temperature Ratings: Operating temperature ranges differ, with the Fuji module having the highest operating junction temperature at 175°C, followed by Mitsubishi and Infineon.
  4. Built-in Protections: The Fuji module features built-in protection circuits such as short-circuit protection, over-temperature protection, and under-voltage lockout, enhancing safety and reliability.