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International Rectifier IRF6644TR1PBF IGBT Module

IRF6644TR1PBF

#International Rectifier, #IRF6644TR1PBF, #IGBT_Module, #IGBT, IRF6644TR1PBF Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FE

· Categories: IGBT Module
· Manufacturer: International Rectifier
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1063
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IRF6644TR1PBF Specification

Sell IRF6644TR1PBF, #International Rectifier #IRF6644TR1PBF Stock, IRF6644TR1PBF Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,; IRF6644TR1PBF, #IGBT_Module, #IGBT, #IRF6644TR1PBF
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URL: https://www.slw-ele.com/irf6644tr1pbf.html

Manufacturer Part Number: IRF6644TR1PBFPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGManufacturer: Infineon Technologies AGRisk Rank: 5.66Additional Feature: LOW CONDUCTION LOSSAvalanche Energy Rating (Eas): 86 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 10 ADrain-source On Resistance-Max: 0.013 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XBCC-N3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: CHIP CARRIERPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 2.8 WPower Dissipation-Max (Abs): 89 WPulsed Drain Current-Max (IDM): 228 ASurface Mount: YESTerminal Form: NO LEADTerminal Position: BOTTOMTransistor Element Material: SILICON Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,

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