#Vishay Siliconix, #IRFD9210PBF, #IGBT_Module, #IGBT, IRFD9210PBF Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: IRFD9210PBFPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: DIPPackage Description: IN-LINE, R-PDIP-T3Pin Count: 4ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 0.87Avalanche Energy Rating (Eas): 210 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 200 VDrain Current-Max (ID): 0.4 ADrain-source On Resistance-Max: 3 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDIP-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 3.2 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4