#International Rectifier, #IRG4BC15UD_LPBF, #IGBT_Module, #IGBT, IRG4BC15UD-LPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAG
Manufacturer Part Number: IRG4BC15UD-LPBFRohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: IN-LINE, R-PSIP-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 7.44Collector Current-Max (IC): 14 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-262JESD-30 Code: R-PSIP-T3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 19 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3